Hardtdegen, A.: search on Z-Library

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1

MOVPE process for horizontal reactors with reduced parasitic deposition

H. Hardtdegen, N. Kaluza, R. Steins, R. Schmidt, K. Wirtz, E.V. Yakovlev, R.A. Talalaev, Yu.N. Makarov

Journal:

Journal of Crystal Growth

Year:

2004

Language:

english

File:

PDF, 504 KB

english, 2004

2

Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour deposition

M. Hostalek, L. Pohl, A. Brauers, P. Balk, V. Frese, H. Hardtdegen, R. Hövel, G.K. Regel, A. Molassioti, M. Moser, F. Scholz

Journal:

Thin Solid Films

Year:

1989

Language:

english

File:

PDF, 182 KB

english, 1989

3

As/InP rings

Appenzeller, J., Schäpers, Th., Hardtdegen, H., Lengeler, B., Lüth, H.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 763 KB

english, 1995

4

Metal organic vapor phase epitaxy of hexagonal Ge–Sb–Te (GST)

Schuck, Martin, Rieß, Sally, Schreiber, Marcel, Mussler, Gregor, Grützmacher, Detlev, Hardtdegen, Hilde

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 933 KB

english, 2015

5

Magnetism in GaN layers implanted by La, Gd, Dy and Lu

Z. Sofer, D. Sedmidubský, M. Moram, A. Macková, M. Maryško, J. Hejtmánek, C. Buchal, H. Hardtdegen, M. Václavů, V. Peřina, R. Groetzschel, M. Mikulics

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 1.22 MB

english, 2011

6

[AIP NOISE AND FLUCTUATIONS: 20th International Conference on Noice and Fluctuations (ICNF-2009) - Pisa (Italy) (14–19 June 2009)] AIP Conference Proceedings - Low Frequency Noise in 2 DEG Channel of AlGaN∕GaN Heterostructures Scaled to Nanosize Width

Vitusevich, Svetlana A., Petrychuk, Mykhaylo V., Sydoruk, Viktor A., Schäpers, Thomas, Hardtdegen, Hilde, Belyaev, Alexander E., Offenhäusser, Andreas, Klein, Norbert, Macucci, Massimo, Basso, Giova

Year:

2009

Language:

english

File:

PDF, 284 KB

english, 2009

7

SPIE Proceedings [SPIE SPIE NanoScience + Engineering - San Diego, California, United States (Sunday 17 August 2014)] Spintronics VII - Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures

Drouhin, Henri-Jean, Wegrowe, Jean-Eric, Razeghi, Manijeh, Heedt, Sebastian, Wehrmann, Isabel, Gerster, Thomas, Wenk, Paul, Kettemann, Stefan, Sladek, Kamil, Hardtdegen, Hilde, Bringer, Andreas, Schub

Year:

2014

Language:

english

File:

PDF, 10.20 MB

english, 2014

8

As/InP rings

Appenzeller, J., Schäpers, Th., Hardtdegen, H., Lengeler, B., Lüth, H.

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 200 KB

english, 1995

9

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

Martin Mikulics, Hilde Hardtdegen, Andreas Winden, Alfred Fox, Michel Marso, Zdeněk Sofer, Hans Lüth, Detlev Grützmacher, Peter Kordoš

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 250 KB

english, 2012

10

two-dimensional electron gases with strong spin-orbit coupling

Guzenko, Vitaliy A., Schäpers, Thomas, Hardtdegen, Hilde

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 385 KB

english, 2007

11

Electric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime

Sydoruk, V. A., Vitusevich, S. A., Hardtdegen, H., Petrychuk, M. V., Naumov, A. V., Korotyeyev, V. V., Kochelap, V. A., Belyaev, A. E.

Journal:

Fluctuation and Noise Letters

Year:

2017

Language:

english

File:

PDF, 336 KB

english, 2017

12

[IEEE 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2014.10.20-2014.10.22)] The Tenth International Conference on Advanced Semiconductor Devices and Microsystems - III-nitride nano-LEDs for single photon lithography

Trellenkamp, St., Mikulics, M., Winden, A., Arango, Y. C., Moers, J., Marso, M., Grutzmacher, D., Hardtdegen, H.

Year:

2014

Language:

english

File:

PDF, 2.65 MB

english, 2014

13

Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires

Haas, F, Sladek, K, Winden, A, von der Ahe, M, Weirich, T E, Rieger, T, Lüth, H, Grützmacher, D, Schäpers, Th, Hardtdegen, H

Journal:

Year:

2013

Language:

english

File:

PDF, 2.51 MB

english, 2013

14

Modeling and experimental verification of deposition behavior during AlGaAs growth: a comparison for the carrier gases N2 and H2

M. Dauelsberg, H. Hardtdegen, L. Kadinski, A. Kaluza, P. Kaufmann

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 629 KB

english, 2001

15

Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system

Hardtdegen, Hilde, Mikulics, Martin, Rieß, Sally, Schuck, Martin, Saltzmann, Tobias, Simon, Ulrich, Longo, Massimo

Journal:

Progress in Crystal Growth and Characterization of Materials

Year:

2015

Language:

english

File:

PDF, 3.35 MB

english, 2015

16

Compact extreme ultraviolet source for laboratory-based photoemission spectromicroscopy

Schmitz, Christoph, Wilson, Daniel, Rudolf, Denis, Wiemann, Carsten, Plucinski, Lukasz, Riess, Sally, Schuck, Martin, Hardtdegen, Hilde, Schneider, Claus M., Tautz, F. Stefan, Juschkin, Larissa

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 2.00 MB

english, 2016

17

KMC Simulation of the Electroforming, Set and Reset Processes in Redox-based Resistive Switching Devices

Abbaspour, Elhameh, Menzel, Stephan, Hardtdegen, Alexander, Hoffmann-Eifert, Susanne, Jungemann, Christoph

Journal:

IEEE Transactions on Nanotechnology

Year:

2018

Language:

english

File:

PDF, 4.19 MB

english, 2018

18

MOVPE growth and in situ characterization of GaN layers on sapphire substrates

H. Hardtdegen, N. Kaluza, R. Schmidt, R. Steins, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov, J.-T. Zettler

Journal:

physica status solidi (a)

Year:

2004

Language:

english

File:

PDF, 317 KB

english, 2004

19

A new approach towards low-pressure metalorganic vapor phase epitaxy of (AlGa)As using triethylgallium and dimethylethylaminealane

Hilde Hardtdegen, Chr. Ungermanns, M. Hollfelder, T. Raafat, R. Carius, St. Hasenöhrl, H. Lüth

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 646 KB

english, 1994

20

High-field quasi-ballistic transport in AlGaN/GaN heterostructures

Danilchenko, B. A., Tripachko, N. A., Belyaev, A. E., Vitusevich, S. A., Hardtdegen, H., Lüth, H.

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 761 KB

english, 2014

21

two-dimensional electron gases

Thillosen, N., Cabañas, S., Kaluza, N., Guzenko, V. A., Hardtdegen, H., Schäpers, Th.

Journal:

Physical Review B

Year:

2006

Language:

english

File:

PDF, 534 KB

english, 2006

22

g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

Larsson, M., Nilsson, H. A., Hardtdegen, H., Xu, H. Q.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 376 KB

english, 2009

23

Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy

Rodenbücher, C., Gensch, T., Speier, W., Breuer, U., Pilch, M., Hardtdegen, H., Mikulics, M., Zych, E., Waser, R., Szot, K.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 3.25 MB

english, 2013

24

Hexagonal LaLuO3 as high-κ dielectric

Schäfer, Anna, Wendt, Fabian, Mantl, Siegfried, Hardtdegen, Hilde, Mikulics, Martin, Schubert, Jürgen, Luysberg, Martina, Besmehn, Astrid, Niu, Gang, Schroeder, Thomas

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2015

Language:

english

File:

PDF, 2.00 MB

english, 2015

25

Long electron spin coherence in ion-implanted GaN: The role of localization

Buß, J. H., Rudolph, J., Shvarkov, S., Hardtdegen, H., Wieck, A. D., Hägele, D.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 831 KB

english, 2013

26

Multidimensional Simulation of Threshold Switching in NbO 2 Based on an Electric Field Triggered Thermal Runaway Model

Funck, Carsten, Menzel, Stephan, Aslam, Nabeel, Zhang, Hehe, Hardtdegen, Alexander, Waser, Rainer, Hoffmann-Eifert, Susanne

Journal:

Advanced Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.44 MB

english, 2016

27

Tuning the Performance of Pt/HfO2/Ti/Pt ReRAM Devices Obtained from Plasma-Enhanced Atomic Layer Deposition for HfO2 Thin Films

Hardtdegen, A., Zhang, H., Hoffmann-Eifert, S.

Journal:

ECS Transactions

Year:

2016

Language:

english

File:

PDF, 629 KB

english, 2016

28

Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE

Y.S. Cho, H. Hardtdegen, N. Kaluza, M. von der Ahe, U. Breuer, H.-P. Bochem, P. Ruterana, K. Schmalbuch, D. Wenzel, Th. Schäpers, B. Beschoten, D. Grützmacher, H. Lüth

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 1.15 MB

english, 2009

29

Uniform III-nitride growth in single wafer horizontal MOVPE reactors

H. Hardtdegen, N. Kaluza, R. Steins, P. Javorka, K. Wirtz, A. Alam, T. Schmitt, R. Beccard

Journal:

physica status solidi (a)

Year:

2005

Language:

english

File:

PDF, 145 KB

english, 2005

30

Darstellung, Struktur und magnetisches Verhalten von Alkali-metallmanganchalkogeniden A6MnX4 mit A Na oder K und X S, Se oder Te

ProF. Dr. W. Bronger, Dr. H. Balk-Hardtdegen

Journal:

Zeitschrift für anorganische und allgemeine Chemie

Year:

1989

File:

PDF, 481 KB

1989

31

The Role of Si during the Growth of GaN Micro- and Nanorods

Tessarek, C., Heilmann, M., Butzen, E., Haab, A., Hardtdegen, H., Dieker, C., Spiecker, E., Christiansen, S.

Journal:

Crystal Growth & Design

Year:

2014

Language:

english

File:

PDF, 1.31 MB

english, 2014

32

As superlattices embedded in p - i - n diodes: Structural properties and optical response

Royo, F., Schwedler, R., Camassel, J., Meyer, R., Hardtdegen, H., Fraisse, B.

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 152 KB

english, 1996

33

heterostructures with superconducting contacts

Batov, Igor E., Schäpers, Thomas, Chtchelkatchev, Nikolai M., Hardtdegen, Hilde, Ustinov, Alexey V.

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 214 KB

english, 2007

34

Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications

Dippel, Ann-Christin, Gutowski, Olof, Klemeyer, Lars, Boettger, Ulrich, Berg, Fenja, Schneller, Theodor, Hardtdegen, Alexander, Aussen, Stephan, Hoffmann-Eifert, Susanne, Zimmermann, Martin v.

Journal:

Year:

2020

File:

PDF, 2.81 MB

2020

35

The permeable junction base transistor with a new gate of extremely high doped p++ - GaAs

J. Gräber, M. Kamp, G. Mörsch, R. Meyer, H. Hardtdegen, H. Lüth

Journal:

Microelectronic Engineering

Year:

1992

Language:

english

File:

PDF, 266 KB

english, 1992

36

Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1−xAs growth in MOVPE

K. Haberland, A. Kaluza, M. Zorn, M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 199 KB

english, 2002

37

Self-assembled GaN nanostructures by dry etching and their optical properties

Anna Haab, Martin Mikulics, Andreas Winden, Sally Voigt, Martina von der Ahe, Jürgen Moers, Konrad Wirtz, Toma Stoica, Detlev Grützmacher, Hilde Hardtdegen

Journal:

physica status solidi (a)

Year:

2012

Language:

english

File:

PDF, 474 KB

english, 2012

38

In-situ doping and implantation of GaN layers with Mn

Zdeněk Sofer, David Sedmidubský, Josef Stejskal, Jiří Hejtmánek, Miroslav Maryško, Karel Jurek, Vladimír Havránek, Anna Macková, Hilde Hardtdegen, Michal Václavů

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 256 KB

english, 2009

39

Über Alkalimetallmanganchalkogenide A2MnX2 mit A K, Rb oder Cs und X S, Se oder Te

ProF. Dr. W. Bronger, Dr. H. Balk-Hardtdegen, Dr. D. Schmitz

Journal:

Zeitschrift für anorganische und allgemeine Chemie

Year:

1989

File:

PDF, 417 KB

1989

40

[IEEE The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smolenice Castle, Slovakia (Oct. 17-21, 2004)] The Fifth International Conference on Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. - Smooth GaN recess wet photoelectrochemical etching

Gregusova, D., Novak, J., Hardtdegen, H., Soltys, J., Kostic, I., Gregus, J., Kordos, P.

Year:

2004

Language:

english

File:

PDF, 673 KB

english, 2004

41

Supercurrent control in a multi-terminal Nb-InGaAs/InP junction with Nb injector electrodes

T. Sch Pers, V. A. Guzenko, O. Zimmermann, A. V. D. Hart, H. Hardtdegen

Year:

2003

Language:

english

File:

PDF, 475 KB

english, 2003

42

Interactions at Metaijinp Interfaces Formed at 300K and 77K

Palmer, J.W., Anderson, W.A., Hoelzer, D.T., Hardtdegen, H.

Journal:

MRS Proceedings

Year:

1996

Language:

english

File:

PDF, 422 KB

english, 1996

43

Vertical Ge Gate-All-Around Nanowire pMOSFETs with a Diameter down to 20 nm

Liu, Mingshan, Scholz, Stefan, Hardtdegen, Alexander, Bae, Jin Hee, Hartmann, Jean-Michel, Knoch, Joachim, Grutzmacher, Detlev, Buca, Dan, Zhao, Qing-Tai

Journal:

IEEE Electron Device Letters

Year:

2020

File:

PDF, 4.72 MB

2020

44

On the choice of precursors for the MOVPE-growth of high-quality Al0.30Ga0.70As/GaAs v-groove quantum wires with large subband spacing

A. Kaluza, A. Schwarz, D. Gauer, H. Hardtdegen, N. Nastase, H. Lüth, Th. Schäpers, D. Meertens, A. Maciel, J. Ryan, E. O’Sullivan

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 363 KB

english, 2000

45

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

Kladko, V. P., Kolomys, A. F., Slobodian, M. V., Strelchuk, V. V., Raycheva, V. G., Belyaev, A. E., Bukalov, S. S., Hardtdegen, H., Sydoruk, V. A., Klein, N., Vitusevich, S. A.

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 857 KB

english, 2009

46

[IEEE 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Santa Barbara, CA, USA (27-31 March 1994)] Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) - Quantum transport in quasi one-dimensional In/sub 0.77/Ga/sub 0.23/As/InP rings

Appenzeller, J., Schapers, T., Hardtdegen, H., Lengeler, B., Luth, H.

Year:

1994

Language:

english

File:

PDF, 386 KB

english, 1994

47

[IEEE 2012 International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) - Smolenice, Slovakia (2012.11.11-2012.11.15)] The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control

Trellenkamp, St., Mikulics, M., Winden, A., Adam, R., Moers, J., Marso, M., Grutzmacher, D., Hardtdegen, H.

Year:

2012

Language:

english

File:

PDF, 629 KB

english, 2012

48

Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO[sub 2] layer as gate dielectric

Sun, Jie, Larsson, Marcus, Maximov, Ivan, Hardtdegen, Hilde, Xu, H. Q.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 551 KB

english, 2009

49

Preparation of transparent Nb/two-dimensional electron gas contacts by using electron cyclotron resonance plasma cleaning

Schäpers, Th., Müller, R. P., Crecelius, G., Hardtdegen, H., Lüth, H.

Journal:

Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 503 KB

english, 2000

50

two-dimensional electron gas by an in-plane magnetic field

Cabañas, S., Schäpers, Th., Thillosen, N., Kaluza, N., Guzenko, V. A., Hardtdegen, H.

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 510 KB

english, 2007

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